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Freescale Semiconductor Technical Data
Document Number: MRF6S19120H Rev. 1, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical Single - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 19 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 15 dB Drain Efficiency -- 21.5% ACPR @ 885 kHz Offset -- - 54 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * Low Gold Plating Thickness on Leads, 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S19120HR3 MRF6S19120HSR3
1930 - 1990 MHz, 19 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF6S19120HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF6S19120HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +68 - 0.5, +12 407 2.3 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 120 W CW Case Temperature 73C, 19 W CW Symbol RJC Value (1,2) 0.43 0.45 Unit C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S19120HR3 MRF6S19120HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.7 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2.7 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.95 -- pF VGS(th) VGS(Q) VDS(on) gfs 1 2 -- -- 2 2.8 0.21 6.9 3 4 0.3 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 19 W Avg. N - CDMA, f = 1990 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D ACPR IRL 14 20 -- -- 15 21.5 - 54 - 13 17 -- - 48 -9 dB % dBc dB
MRF6S19120HR3 MRF6S19120HSR3 2 RF Device Data Freescale Semiconductor
VBIAS B1 + R1 C9 C5 C7 C4 R2 C3 Z6 RF INPUT Z1 C1 DUT Z2 Z3 Z4 Z5 Z7 Z8 Z9 C2 Z10 C6 C8 + C10 + C11 + C12 + C13 + C14
VSUPPLY
RF OUTPUT
Z1 Z2 Z3 Z4 Z5 Z6
1.242 0.839 0.230 0.320 0.093 0.160
x 0.084 x 0.084 x 0.180 x 1.100 x 1.100 x 1.098
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z7 Z8 Z9 Z10 PCB
0.387 x 1.098 Microstrip 0.169 x 0.316 Microstrip 0.781 x 0.084 Microstrip 1.228 x 0.084 Microstrip Arlon GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF6S19120HR3(SR3) Test Circuit Schematic
Table 5. MRF6S19120HR3(SR3) Test Circuit Component Designations and Values
Part B1 C1, C2 C3, C4 C5, C6 C7, C8 C9 C10, C11 C12, C13 C14 R1 R2 Short RF Bead 10 pF Chip Capacitors 5.1 pF Chip Capacitors 1.0 nF Chip Capacitors 0.1 F Chip Capacitors 10 F, 35 V Tantalum Chip Capacitor 10 F, 35 V Tantalum Chip Capacitors 22 F, 50 V Tantalum Chip Capacitors 470 F, 63 V Electrolytic Capacitor, Radial 560 KW, 1/4 W Chip Resistor (1206) 10 W, 1/4 W Chip Resistor (1206) Description Part Number 2743019447 100B100JP50X 100B5R1CP50X 100B102JP50X C1825C100J5RAC T491X106K035AS GRM55DR61H106KA88L T491C105K022AS MCR63V470M8X11 CRCW1206560F100 CRCW1206010F100 Manufacturer Fair - Rite ATC ATC ATC Kemet Kemet Murata Kemet Multicomp Vishay Vishay
MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 3
C9
C4 B1 R2 C3
C11 C10
C13
C6 C8
R1
C5 C7
C12
C14
C1
C2
CUT OUT AREA
MRF6S19120 Rev. 0
Figure 2. MRF6S19120HR3(SR3) Test Circuit Component Layout
MRF6S19120HR3 MRF6S19120HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) -10 -12 -14 -16 -18 -20 -22 -24 -26 D, DRAIN EFFICIENCY (%) -10 -12 -14 -16 -18 -20 -22 -24 -26 1500 mA 750 mA IRL, INPUT RETURN LOSS (dB) ACPR (dBc), ALT1 (dBc) IRL, INPUT RETURN LOSS (dB) ACPR (dBc), ALT1 (dBc) 15.6 15.4 Gps, POWER GAIN (dB) 15.2 15 14.8 IRL 14.6 ACPR 14.4 14.2 ALT1 -55 -60 D Gps VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 1000 mA Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) 26 24 22 20 -45 -50
-65 14 1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 19 Watts Avg.
15.6 15.4 Gps, POWER GAIN (dB) 15.2 15 14.8 14.6 14.4 14.2 ACPR ALT1 IRL Gps
VDD = 28 Vdc, Pout = 32 W (Avg.), IDQ = 1000 mA Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF)
32 D 30 28 26 -35 -40 -45 -50
-55 14 1940 1950 1960 1970 1980 1990 2000 2010 2020 2030 2040 f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 32 Watts Avg.
17 IDQ = 1500 mA 16 Gps, POWER GAIN (dB) 1250 mA 15 1000 mA 750 mA 14 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-20 VDD = 28 Vdc -25 f1 = 1988.75 MHz, f2 = 1991.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing -30 IDQ = 500 mA -35 -40 -45 -50 1000 mA -55 0.6 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 1250 mA
13
500 mA
VDD = 28 Vdc f1 = 1988.75 MHz, f2 = 1991.25 MHz Two-Tone Measurements, 2.5 MHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100 300
12 0.6 1
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
0 -10 -20 -30 -40 -50 -60 0.1 3rd Order 5th Order VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1990 MHz
7th Order
1
10
100
63 62 61 Ideal 60 59 P3dB = 52.64 dBm (183.69 W) 58 57 56 55 P1dB = 51.9 dBm (154.32 W) Actual 54 53 52 51 VDD = 28 Vdc, IDQ = 1000 mA 50 Pulsed CW, 12 sec(on), 1% Duty Cycle 49 48 f = 1990 MHz 47 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 Pin, INPUT POWER (dBm)
TWO-TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products versus Tone Spacing
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 50 40 30 20 10
Pout, OUTPUT POWER (dBm)
Figure 8. Pulse CW Output Power versus Input Power
-20 ACPR -30 -40 ALT1 -50 -60 25_C 85_C -30_C -70 -80 100 150 ACPR (dBc), ALT1 (dBc)
VDD = 28 Vdc, IDQ = 1000 mA f = 1990 MHz, Single-Carrier N-CDMA 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) 25_C 85_C -30_C Gps TC = 25_C
D 25_C
0 -10 1 10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power
18 -30_C 17 Gps, POWER GAIN (dB) 16 15 14 13 12 11 1 10 Pout, OUTPUT POWER (WATTS) CW 100 D VDD = 28 Vdc IDQ = 1000 mA f = 1990 MHz D, DRAIN EFFICIENCY (%) TC = -30_C 25_C 85_C Gps 85_C 40 30 20 10 0 25_C 60 50 70 16 15 14 Gps, POWER GAIN (dB) 13 12 11 10 9 8 7 6 0 12 V 50 100 16 V IDQ = 1000 mA f = 1990 MHz 150 200 20 V 24 V 28 V VDD = 32 V
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19120HR3 MRF6S19120HSR3 6
Figure 11. Power Gain versus Output Power
RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
109 MTTF FACTOR (HOURS X AMPS2)
108
107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 885 kHz Offset. ALT1 Measured in 12.5 kHz Bandwidth @ 1.25 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB)
-10 -20 -30 -40 -50 -60 -70 -80 -90 -100
1.2288 MHz Channel BW .... .... . .. .................. ........ . .. . ...... ........ ............. . .. . . . . . +ALT1 in 12.5 kHz . -ALT1 in 12.5 kHz . . . Integrated BW . . Integrated BW . . . . . . . . . . . . .... . . . ............ ........... ...... .... ....... ...... ... .... .. .. . . ....... ... ....... . .... .... . .. . .. ...... ......... ..... .... .. ..... .... .. . .... .. ...... . ... .. ... . . ...... .... .. ... ....... ......... .... . ... ...... ..... ...... .. ........ -ACPR in 30 kHz +ACPR in 30 kHz ........... .. ....... . . ......... ...... .............. ..... .. .... ......... . . ............ . Integrated BW Integrated BW .. ...... ............. ..... ... . .......... .. ... .. ... .. .
Figure 13. Single - Carrier CCDF N - CDMA
-110 -3.6 -2.9 -2.2
-1.5 -0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 14. Single - Carrier N - CDMA Spectrum
MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 7
f = 2020 MHz Zo = 10 Zload f = 1930 MHz f = 2020 MHz
Zsource
f = 1930 MHz
VDD = 28 Vdc, IDQ = 1000 mA, Pout = 19 W Avg. f MHz 1930 1960 1990 2020 Zsource 3.03 - j5.14 2.94 - j4.54 2.75 - j4.34 2.75 - j4.18 Zload 1.52 - j1.77 1.51 - j1.37 1.38 - j1.20 1.41 - j1.11
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S19120HR3 MRF6S19120HSR3 8 RF Device Data Freescale Semiconductor
NOTES
MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 9
NOTES
MRF6S19120HR3 MRF6S19120HSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF6S19120HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF6S19120HSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRF6S19120HR3 MRF6S19120HSR3 RF Device Data Freescale Semiconductor 11
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MRF6S19120HR3 MRF6S19120HSR3
Rev. 12 1, 5/2006 Document Number: MRF6S19120H
RF Device Data Freescale Semiconductor

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